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savantic semiconductor product specification silicon npn power transistors 2SD884 d escription with to-220c package high voltage;high speed large p c applications for horizontal deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratnigs(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 330 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 6 v i c collector current 7 a i cp collector current-peak 10 a i cp collector current-peak nonrepetitive 15 a p t total power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD884 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 200 v v ce (sat) collector-emitter saturation voltage i c =5a ;i b =0.5a 1.0 v v be (sat) base-emitter saturation voltage i c =5a ;i b =0.5a 1.2 v v ce =330v; v eb =0 0.1 i ces collector cut-off current v ce =300v; v eb =0,ta=100 1.0 ma i ebo emitter cut-off current v eb =6.0v; i c =0 1.0 ma h fe dc current gain i c =5a ; v ce =4v 10 45 t f fall time i c =5a ;-v eb =5v i b1 =0.8a;r b =0.5 > 0.75 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD884 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm)

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